Abstract
We studied the multilayering effects of InGaAs quantum dots (QDs) on GaAs(731), a surface lying inside of the stereographic triangle. The surfaces after stacking 16 InGaAs layers were characterized with highly non-uniformity of QD spatial distribution. The bunched step regions driven by strain accumulation are decorated by QDs, therefore GaAs(731) becomes a good candidate substrate for the growth of QD clusters. The unique optical properties of the QD clusters are revealed by photoluminescence measurements. By adjusting the coverage of InGaAs, a bamboo-like nanostructured surface was observed and the quantum dots aligned up in clusters to separate the “bamboo” into sections.
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Xie, Y.Z., Kunets, V.P., Wang, Z.M. et al. Multiple stacking of InGaAs/GaAs (731) nanostructures. Nano-Micro Lett. 1, 1–3 (2009). https://doi.org/10.1007/BF03353596
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DOI: https://doi.org/10.1007/BF03353596