Abstract
Ta-doped In2O3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C. The influence of post-annealing on the structural, morphologic, electrical and optical properties of the films was investigated using X-ray diffraction, field emission scanning electron microscopy, Hall measurements and optical transmission spectroscopy. The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction. The lowest resistivity, 5.1×10−4 Ω cm, was obtained in the film annealed at 500°C, which is half of that of the un-annealed film (9.9×10−4 Ω cm). The average optical transmittance of the films was over 90%. The optical bandgap was found to decrease with increasing annealing temperature.
Article PDF
Similar content being viewed by others
Explore related subjects
Discover the latest articles, news and stories from top researchers in related subjects.Avoid common mistakes on your manuscript.
References
Kim J H, Ahn B D, Kim C H, et al. Heat generation properties of Ga doped ZnO thin films prepared by rf-magnetron sputtering for transparent heaters. Thin Solid Films, 2008, 516: 1330–1333
Han J B, Zhou H J, Wang Q Q. Conductivity and optical nonlinearity of Sb doped SnO2 films. Matt Lett, 2006, 60: 252–254
Kim H, Horwitz J S, Kushto G P, et al. Transparent conducting Zr-doped In2O3 thin films for organic light-emitting diodes. Appl Phys Lett, 2001, 78: 1050–1052
Liu L, Zhang T, Li S C, et al. Micro-structure sensor based on ZnO microcrystals with contact-controlled ethanol sensing. Chinese Sci Bull, 2009, 54: 4371–4375
Liu X L, Xu H Y, Yu L L, et al. Self-assembly of ZnO nanoparticles and preparation of bulk ZnO porous nanosolids. Chinese Sci Bull, 2005, 50: 612–617
Wang Y Q, Yuan S L, Song Y X. Magnetism in Mn and Co doped ZnO bulk samples. Chinese Sci Bull, 2007, 52: 1019–1023
Sun J, Bai Y Z, Sun J C, et al. Structural and electrical properties of ZnO films on freestanding thick diamond films. Chinese Sci Bull, 2008, 53: 2931–2934
Mao F Y, Deng H, Dai L P, et al. High quality p-type ZnO film growth by a simple method and its properties. Chinese Sci Bull, 2008, 53: 2582–2585
Yi L X, Xu Z, Hou Y B, et al. The ultraviolet and blue luminescence properties of ZnO:Zn thin film. Chinese Sci Bull, 2001, 46: 1223–1226
Wang B G, Shi E W, Zhong W Z, et al. Morphological characteristics of ZnO crystallites under hydrothermal conditions. Chinese Sci Bull, 1997, 42: 1041–1046
Cao F, Wang Y D, Liu D L, et al. Preparation and characterization of transparent conductive Nb-doped ZnO films by radio-frequency sputtering. Chin Phys Lett, 2009, 26: 034210/1–3
Zhang B, Dong X, Xu X, et al. Preparation and characterization of tantalum-doped indium tin oxide films deposited by magnetron sputterin. Script Mater, 2008, 58: 203–206
Ju H, Hwang S, Jeong C O, et al. Low-resistivity indium tantalum oxide films by magnetron sputtering. Appl Phys A, 2004, 79: 109–111
Li L, Fang L, Chen X, et al. Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films. Rare Metals, 2007, 26: 247–253
Chang J F, Lin W C, Hon M H, et al. Effects of post-annealing on the structure and properties of Al-doped zinc oxide films. Appl Surf Sci, 2001, 183: 18–25
Zhang D H, Yang T L, Wang Q P, et al. Electrical and optical properties of Al-doped transparent conducting ZnO films deposited on organic substrate by RF sputtering. Mater Chem Phys, 2001, 68: 233–238
Rani S, Roy S C, Bhatnagar M C. Effect of Fe doping on the gas sensing properties of nano-crystalline SnO2 thin films. Sens Actuat B Chem, 2007, 122: 204–210
Cebulla R, Wendt R, Ellmer K. Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties. J Appl Phys, 1998, 83: 1087–1095
Ko H, Tai W P, Kim K C, et al. Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering. J Crystal Growth, 2005, 277: 352–358
Burstein E. Anomalous optical absorption limit in InSb. Phys Rev, 1954, 93: 632–633
Author information
Authors and Affiliations
Corresponding author
Additional information
This article is published with open access at Springerlink.com
Rights and permissions
This article is published under an open access license. Please check the 'Copyright Information' section either on this page or in the PDF for details of this license and what re-use is permitted. If your intended use exceeds what is permitted by the license or if you are unable to locate the licence and re-use information, please contact the Rights and Permissions team.
About this article
Cite this article
Xu, L., Wang, R., Liu, Y. et al. Influence of post-annealing on the properties of Ta-doped In2O3 transparent conductive films. Chin. Sci. Bull. 56, 1535–1538 (2011). https://doi.org/10.1007/s11434-011-4450-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11434-011-4450-y