Abstract
Continued reduction in feature dimension in integrated circuits demands high degree of flatness after chemical mechanical polishing. Here we report using new yttrium oxide (Y2O3) nanosheets as slurry abrasives for chemical-mechanical planarization (CMP) of copper. Results showed that the global planarization was improved by 30% using a slurry containing Y2O3 nanosheets in comparison with a standard industrial slurry. During CMP, the two-dimensional square shaped Y2O3 nanosheet is believed to induce the low friction, the better rheological performance, and the laminar flow leading to the decrease in the within-wafer-non-uniformity, surface roughness, as well as dishing. The application of the two-dimensional nanosheets as abrasive in CMP would increase the manufacturing yield of integrated circuits.
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Xingliang HE. He is a PhD candidate at Department of Mechanical Engineering, Texas A&M University, USA. He received his BS and MS degrees in Materials Physics and Chemistry from Yunnan University, and Chinese Academy of Sciences, China, in 2006 and 2010, respectively. His current research area includes synthesis and characterizations of nanomaterials for semiconductor processing, lubrication, and wear & corrosion resistance.
Hong LIANG. Professor of Department of Mechanical Engineering and Materials Science Engineering, at Texas A&M University, USA. Dr. Liang has extensive experience in academia, government laboratories, and industry. She is a fellow of American Society of Mechanical Engineers (ASME) and a fellow of Society of Tribologists and Lubrication Engineers (STLE). She has maintained long-standing interests and activity in tribology, surface science, chemical-mechanical planarization, and nanomanufacturing.
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He, X., Chen, Y., Zhao, H. et al. Y2O3 nanosheets as slurry abrasives for chemical-mechanical planarization of copper. Friction 1, 327–332 (2013). https://doi.org/10.1007/s40544-013-0017-z
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DOI: https://doi.org/10.1007/s40544-013-0017-z