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Retraction
This article is retracted.
The journal editors would like to apologise for the early publication of the original article [1], which is being retracted as it was published prior to the completion of essential revisions.
The revised version of this article has now been published, and is available online [2].
References
Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 2013, 9: 152.
Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 2014, 9: 125. 10.1186/1556-276X-9-125
Additional information
The online version of the original article can be found at 10.1186/1556-276X-9-125
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Open Access This article is distributed under the terms of the Creative Commons Attribution 2.0 International License ( https://creativecommons.org/licenses/by/2.0 ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Prakash, A., Maikap, S., Chiu, HC. et al. Retraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Res Lett 8, 419 (2013). https://doi.org/10.1186/1556-276X-8-419
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DOI: https://doi.org/10.1186/1556-276X-8-419